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Published in 2021 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2021.111530
Abstract: Abstract We investigate the inductively coupled plasma (ICP) etching characteristics of (0002) Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al0.94Sc0.06N) piezoelectric thin films as well as the implementation on piezoelectric lamb wave resonators. A profile…
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Keywords:
icp etching;
aln alscn;
characterization aln;
alscn film ... See more keywords