High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0134633
Abstract: In this work, high-performance high-electron-mobility transistors (HEMTs) with a thin GaN channel and an AlN back barrier were fabricated and investigated in detail. The AlN back barrier HEMTs possess a higher current density and a… read more here.
Keywords: barrier hemts; aln back; back barrier; performance ... See more keywords