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Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.3c03438
Abstract: The heteroepitaxy of high-quality aluminum nitride (AlN) with low stress is essential for the development of energy-efficient deep ultraviolet light-emitting diodes (DUV-LEDs). In this work, we realize that quasi-van der Waals epitaxy growth of a…
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Keywords:
stress;
aln;
aln film;
deep ultraviolet ... See more keywords
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Published in 2020 at "AIP Advances"
DOI: 10.1063/5.0025736
Abstract: In this study, we developed a novel growth method named “Flux-Film-Coated (FFC) sputtering.” In this method, nitrogen radicals were supplied to the Al–Sn flux at around 600 °C followed by the deposition of an Al–Sn metal…
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Keywords:
flux;
sputtering method;
method;
film ... See more keywords
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Published in 2021 at "Chinese Physics B"
DOI: 10.1088/1674-1056/abd392
Abstract: AlN films grown on sputter-deposited and annealed AlN buffer layer by high temperature hydride vapor phase epitaxy (HVPE) have been fabricated and structurally characterized. The crystalline quality and surface morphology of as-grown AlN films with…
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Keywords:
aln film;
aln;
aln films;
layer ... See more keywords
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Published in 2021 at "Materials"
DOI: 10.3390/ma14071722
Abstract: Aluminum nitride (AlN) films were grown on the m-plane sapphire by high-temperature hydride vapor phase epitaxy (HVPE). The effect of high-temperature nitridation on the quality of AlN film was studied. The high-temperature nitridation is favorable…
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Keywords:
nitridation;
high temperature;
temperature;
aln film ... See more keywords
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Published in 2018 at "Applied Physics Express"
DOI: 10.7567/1882-0786/aaeede
Abstract: Crack-free crystalline AlN film was synthesized on two-dimensional multilayer hexagonal BN (h-BN) by metal organic vapor phase epitaxy (MOVPE). The multilayer h-BN was directly grown on sapphire substrates in wafer scale by MOVPE, with a…
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Keywords:
multilayer hexagonal;
two dimensional;
dimensional multilayer;
aln ... See more keywords