Effects of Cr doping on the mechanical properties of AlN films grown by the co-sputtering technique
Sign Up to like & getrecommendations! Published in 2019 at "Ceramics International"
DOI: 10.1016/j.ceramint.2018.10.058
Abstract: Abstract We report the mechanical properties of Cr-doped AlN thin films synthesized by reactive magnetron co-sputtering technique with different Cr concentrations (0, 2, 4, 6 and 11 at%). Surface chemical analysis and crystal structure studies of… read more here.
Keywords: mechanical properties; effects doping; sputtering technique; doping mechanical ... See more keywords
Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.09.076
Abstract: Abstract High-crystallinity a-plane AlN(11 2 0) films containing a low-temperature AlN (LT-AlN) buffer layer and a high-temperature AlN (HT-AlN) film were grown on r-plane sapphire(1 1 02) substrates. We investigated the effect of the growth… read more here.
Keywords: temperature; crystallinity; aln films; aln ... See more keywords
Improvement mechanism of sputtered AlN films by high-temperature annealing
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.09.002
Abstract: Abstract The improvement mechanism of sputtered AlN films by high temperature annealing in nitrogen ambient has been investigated. Sputtered AlN films were annealed at 1100–1700 °C and their microstructures were observed by scanning transmission electron microscopy.… read more here.
Keywords: temperature; aln films; improvement mechanism; films high ... See more keywords
Effects of 6H-SiC substrate polarity on the morphology and microstructure of AlN films by HVPE with varied V/III ratio
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.11.018
Abstract: Abstract AlN films grown by high temperature hydride vapor phase epitaxy (HVPE) on Si-face and C-face 6H-SiC substrates were investigated. The influences of the substrate polarity with varied V/III ratio on growth mode, structural characteristics… read more here.
Keywords: substrate polarity; growth; face; ratio ... See more keywords
Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.01.011
Abstract: Abstract High-quality AlN templates fabricated by sputtering-deposition and post-deposition high-temperature annealing have great potential for deep ultraviolet light-emitting device applications. In this work, we fabricated AlN films on 6H-SiC substrates by sputtering and face-to-face annealing… read more here.
Keywords: aln; sic substrates; sputtering deposition; aln templates ... See more keywords
Investigation on halide vapor phase epitaxial growth of AlN using N2 as N source
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2020.125567
Abstract: Abstract Epitaxial growth of AlN films on sapphire substrates prepared by halide vapor phase epitaxy (HVPE) using N2 as N source is reported. The effects of V/III ratio on the growth rate, surface morphology and… read more here.
Keywords: epitaxial growth; source; aln films; iii ratio ... See more keywords
Effect of MOVPE growth conditions on AlN films on annealed sputtered AlN templates with nano-striped patterns
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2021.126237
Abstract: Abstract The metalorganic vapor phase epitaxial (MOVPE) growth of AlN films was performed on face-to-face annealed sputtered AlN templates (FFA Sp-AlN) having a nano-striped pattern with a period of 300 nm and depth of 120 nm. Then,… read more here.
Keywords: growth; growth conditions; aln; aln templates ... See more keywords
Preparation and characterization of Er-doped AlN films by RF magnetron sputtering
Sign Up to like & getrecommendations! Published in 2017 at "Materials Letters"
DOI: 10.1016/j.matlet.2017.12.111
Abstract: Abstract Er-doped AlN thin films were deposited by RF magnetron sputtering on (0001) sapphire substrates under different temperature. We systematically investigate the influence of substrate temperature on the crystalline structure and the piezoelectric properties of… read more here.
Keywords: magnetron sputtering; substrate temperature; aln films; doped aln ... See more keywords
Ultraviolet optical properties analysis of wurtzite AlN films grown by vapor phase epitaxy
Sign Up to like & getrecommendations! Published in 2021 at "Optical Materials"
DOI: 10.1016/j.optmat.2020.110678
Abstract: Abstract The UV optical properties of (0 0 2) AlN thin films were studied. Under the excitation of 213 nm laser, there are two emission peaks of AlN in UV-A band with thermal quenching phenomenon. Combined… read more here.
Keywords: optical properties; ultraviolet optical; properties analysis; aln films ... See more keywords
Deposition of AlN films for acoustic biosensors by deep oscillation magnetron sputtering: effect of bias voltage
Sign Up to like & getrecommendations! Published in 2018 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2018.08.022
Abstract: Abstract The present study showed that Deep Oscillation Magnetron Sputtering (DOMS) has an excellent potential to produce AlN films for biosensing applications. However, careful control of the process parameters is required to attain the desired… read more here.
Keywords: magnetron sputtering; microscopy; effect bias; deep oscillation ... See more keywords
Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design.
Sign Up to like & getrecommendations! Published in 2021 at "Inorganic chemistry"
DOI: 10.1021/acs.inorgchem.1c00731
Abstract: A heteroleptic amidoalane precursor is presented as a more suitably designed candidate to replace trimethylaluminum (TMA) for atomic layer deposition of aluminum nitride (AlN). The lack of C-Al bonds and the strongly reducing hydride ligands… read more here.
Keywords: aluminum nitride; atomic layer; aln films; precursor ... See more keywords