Pyroelectric Property of Binary Nitrides (AlN, GaN and InN)
Sign Up to like & getrecommendations! Published in 2019 at "International Journal of Thermophysics"
DOI: 10.1007/s10765-019-2481-9
Abstract: AbstractThe pyroelectric (PY) property of binary nitrides (AlN, GaN and InN) has been explored theoretically. The spontaneous and piezoelectric (PZ) polarization modifies the thermal conductivity of these nitrides. The thermal conductivities as a function of… read more here.
Keywords: aln gan; property binary; binary nitrides; gan inn ... See more keywords
Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications
Sign Up to like & getrecommendations! Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00805-7
Abstract: This paper presents a comprehensive TCAD based assessment to evaluate the intrinsic gain and minimum noise figure metrics of the T – Gate, and the π – Gate AlGaN/AlN/GaN HEMTs along with their recessed architectures.… read more here.
Keywords: algan aln; aln gan; gain; gan hemts ... See more keywords
Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.12.005
Abstract: Abstract Crystal properties of low-temperature grown AlN (LT-AlN) combined with low temperature GaN (LT-GaN) grown by metal organic vapor phase epitaxy (MOVPE) were investigated to obtain a high quality GaN/AlN/GaN structure with a few-nm-thick AlN… read more here.
Keywords: gan; low temperature; aln gan; metal organic ... See more keywords
Growth of millimeter wave AlN/GaN heterostructures by MOCVD
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.125265
Abstract: Abstract The influences of growth temperature on crystalline quality and electrical properties of thin barrier AlN/GaN heterostructures were studied by metal organic chemical vapor deposition (MOCVD). It is found that the high growth temperature (≥1100 °C)… read more here.
Keywords: growth temperature; layer; growth; aln gan ... See more keywords
Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors
Sign Up to like & getrecommendations! Published in 2018 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2018.05.009
Abstract: Abstract We propose a specialized gate-drain separation structure for use in investigation of the dynamic behavior of the thermal transport characteristics in AlGaN/AlN/GaN heterojunction transistors. Using this structure, the influence of the two-dimensional electron gas… read more here.
Keywords: algan aln; temperature; aln gan; gan heterojunction ... See more keywords
Improved interfacial properties of thermal atomic layer deposited AlN on GaN
Sign Up to like & getrecommendations! Published in 2019 at "Vacuum"
DOI: 10.1016/j.vacuum.2018.10.067
Abstract: Abstract The interfacial properties of atomic layer deposited AlN on n-GaN substrate were investigated. Capacitance–voltage (C V) characteristics showed that the sample with a 24 nm thick AlN had lower interface state density than the sample… read more here.
Keywords: aln gan; aln; deposited aln; interfacial properties ... See more keywords
Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-08307-0
Abstract: Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of… read more here.
Keywords: algan aln; coherent tunneling; aln gan; diode ... See more keywords
Enhancing deep-UV emission at 234 nm by introducing a truncated pyramid AlN/GaN nanostructure with fine-tuned multiple facets.
Sign Up to like & getrecommendations! Published in 2022 at "Nanoscale"
DOI: 10.1039/d1nr06188g
Abstract: The external quantum efficiency of a high-Al content (>0.6) AlGaN deep-ultraviolet (DUV) light-emitting diode is typically below 1% in the sub-250 nm wavelength range. One of the main reasons for this low efficiency is the… read more here.
Keywords: nanostructure fine; truncated pyramid; aln gan; fine tuned ... See more keywords
2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0050584
Abstract: Integration of nitrides with other material systems has recently become of interest due to the high performance of GaN-based high-electron mobility transistors. However, the elevated growth temperatures often used to grow high quality AlN pose… read more here.
Keywords: low temperature; temperature; aln gan; gan hemt ... See more keywords
Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aa5473
Abstract: The performance of gallium nitride transistors is still limited by technological problems often related to defects and traps. In this work, virgin AlGaN/AlN/GaN HEMTs exhibiting an anomalous DC behavior accompanied by frequency dispersion in the… read more here.
Keywords: algan aln; anomalous behavior; aln gan; gan hemts ... See more keywords
High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2019.2952314
Abstract: We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm, an excellent electron confinement with a… read more here.
Keywords: sub sub; sub; aln gan; ghz ... See more keywords