High-quality AlN grown with a single substrate temperature below 1200 °C
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DOI: 10.1038/s41598-017-07616-8
Abstract: Abstract1.5-μm AlN grown by metal-organic chemical vapor deposition (MOCVD), with a single substrate temperature of 1180 °C, exhibits atomically flat surface and the XRD (102) peak width of 427 arcsec. The results are achieved with a pulsed… read more here.
Keywords: temperature; aln grown; substrate temperature; single substrate ... See more keywords
Ultra-flat AlN grown with a pulsed H2 etching condition
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Express"
DOI: 10.7567/1882-0786/aaf5c2
Abstract: A 1.5 μm AlN epilayer with a root-mean-square surface roughness of 0.25 nm was grown by metal-organic chemical vapor deposition at the single substrate temperature below 1200 °C. The ultra-flat surface is achieved with 30… read more here.
Keywords: grown pulsed; aln grown; ultra flat; aln ... See more keywords