Ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE): a new approach to high quality AlN growth
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DOI: 10.1039/c8ce01473f
Abstract: We propose a new growth technique, ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE), for high quality AlN growth. Nitrogen (N2) gas, instead of ammonia (NH3) gas in the conventional MOVPE growth technique, is used… read more here.
Keywords: technique; high quality; quality aln; aln growth ... See more keywords