Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5041924
Abstract: We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence… read more here.
Keywords: aln interlayer; influence aln; aln; photovoltaic properties ... See more keywords
Effect of layer structure of AlN interlayer on the strain in GaN layers during metal-organic vapor phase epitaxy on Si substrates
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Applied Physics"
DOI: 10.1063/5.0143985
Abstract: It is highly challenging to grow high-quality gallium nitride (GaN) layers on silicon (Si) substrates due to the intrinsic mismatching of their structural and thermal properties. Aluminum nitride (AlN) interlayers have been used to induce… read more here.
Keywords: aln interlayer; strain gan; layer; strain ... See more keywords
Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low- Noise Amplifiers Operation
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DOI: 10.1109/led.2017.2709751
Abstract: Three transistors with different AlGaN/GaN interface designs (sharp interface, standard interface, and an extra AlN interlayer) were studied in-depth under conditions mimicking low-noise amplifiers (LNAs) operation. A new measurement setup, analog to LNAs operation condition,… read more here.
Keywords: aln interlayer; recovery time; algan gan; time ... See more keywords