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   Articles with "aln sic" as a keyword



In-situ formation of bulk and porous h-AlN/SiC-based ceramics from geopolymer technique

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recommendations! Published in 2019 at "Ceramics International"

DOI: 10.1016/j.ceramint.2019.08.212

Abstract: Abstract In this paper, bulk and porous AlN/SiC based ceramics were in-situ prepared from graphite/geopolymer composites based on the carbon thermal reduction reaction under high temperatures. Thermal evolution of graphite/geopolymer composites were systematically investigated by… read more here.

Keywords: sic based; porous aln; aln sic; aln ... See more keywords
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Investigation of the effect of the SiC particle size on the properties of the AlN–SiC composite ceramic

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recommendations! Published in 2021 at "Materials Chemistry and Physics"

DOI: 10.1016/j.matchemphys.2021.124222

Abstract: Abstract In this paper, high density AlN–SiC composite ceramic with Y2O3 as the sintering additive was prepared by pressureless sintering at 2000 °C in an inert gas atmosphere. The effects of original SiC particle size on… read more here.

Keywords: particle size; composite ceramic; sic composite; aln sic ... See more keywords

Thermophysical property measurement of GaN/SiC, GaN/AlN, and AlN/SiC epitaxial wafers using multi-frequency/spot-size time-domain thermoreflectance

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recommendations! Published in 2025 at "Journal of Applied Physics"

DOI: 10.1063/5.0245381

Abstract: Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are essential components in modern radio frequency power amplifiers. In order to improve both the device electrical and thermal performance (e.g., higher current density operation and better… read more here.

Keywords: aln sic; gan sic; gan aln; gan ... See more keywords
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Experimental investigation on viscosity of AlN and SiC nanofluids

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recommendations! Published in 2020 at "Chemical Engineering Communications"

DOI: 10.1080/00986445.2020.1855151

Abstract: The quest for effective and efficient heat exchange systems has been a subject of recent research. Nanofluids are high performance ultra-modern heat transfer fluids with superior properties compare... read more here.

Keywords: investigation viscosity; aln sic; experimental investigation; viscosity aln ... See more keywords

Experimental Investigation of GaN-on-AlN/SiC Transistors With Regard to Monolithic Integration

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recommendations! Published in 2024 at "IEEE Transactions on Power Electronics"

DOI: 10.1109/tpel.2024.3432327

Abstract: The monolithic integration of the GaN-on-Si high-electron-mobility transistors (HEMTs) is challenging since the back-gating effects caused by a common substrate degrade the device's performance. In this article, we introduce novel GaN-on-AlN/SiC power HEMTs. Compared with… read more here.

Keywords: gan aln; power; aln sic; monolithic integration ... See more keywords

Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates

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recommendations! Published in 2017 at "Physics of the Solid State"

DOI: 10.1134/s1063783417040114

Abstract: The effect of changing the misfit dislocation propagation direction during GaN layer growth on the AlN/SiC/Si(111) structure surface is detected. The effect is as follows. As the GaN layer growing on AlN/SiC/Si(111) reaches a certain… read more here.

Keywords: misfit dislocation; growth; aln sic; effect ... See more keywords

Ground-State Structure of Quaternary Alloys (SiC)1−x (AlN)x and (SiC)1−x (GaN)x

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recommendations! Published in 2023 at "Micromachines"

DOI: 10.3390/mi14020250

Abstract: Despite III-nitride and silicon carbide being the materials of choice for a wide range of applications, theoretical studies on their quaternary alloys are limited. Here, we report a systematic computational study on the electronic structural… read more here.

Keywords: state structure; sic aln; quaternary alloys; aln sic ... See more keywords

Coherent strain evolution at the initial growth stage of AlN on SiC(0001) proved by in situ synchrotron X-ray diffraction

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recommendations! Published in 2020 at "Applied Physics Express"

DOI: 10.35848/1882-0786/ab84bf

Abstract: We carry out real-time in situ synchrotron X-ray diffraction on the growth of GaN and AlN on SiC(0001) substrate by molecular beam epitaxy. At the initial growth stage of GaN/SiC or AlN/SiC heterostructure, the epitaxial… read more here.

Keywords: sic 0001; growth; aln sic; stage ... See more keywords