XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202500393
Abstract: AlN has the largest bandgap in the wurtzite III‐nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field‐effect transistors, analogous to silicon‐on‐insulator technology. Unlike /Si/,… read more here.
Keywords: crystal aln; bandgap; single crystal; aln ... See more keywords
Structural characteristics of m-plane AlN substrates and homoepitaxial films
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.07.012
Abstract: Abstract Homoepitaxial non-polar AlN films were realized on m-plane ( 10 1 - 0 ) -oriented AlN single crystals by metalorganic chemical vapor deposition (MOCVD). The microstructural properties of m-plane AlN substrates and homoepitaxial films… read more here.
Keywords: plane; growth; homoepitaxial films; substrates homoepitaxial ... See more keywords
High free carrier concentration in p-GaN grown on AlN substrates
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DOI: 10.1063/1.4995239
Abstract: A high free hole concentration in III-nitrides is important for next generation optoelectronic and high power electronic devices. The free hole concentration exceeding 1018 cm−3 and resistivity as low as 0.7 Ω cm are reported for p-GaN… read more here.
Keywords: aln substrates; aln; high free; concentration ... See more keywords
Selective area growth of InGaN-based nanocolumn LED crystals on AlN/Si substrates useful for integrated μ-LED fabrication
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5022298
Abstract: Triangular-lattice nanopillar-array templates with a lattice constant of 280 nm and with AlN disks on top of the underlying Si pillars were prepared on 2-in. AlN/Si substrates through nanoimprint lithography and dry etching. Regularly arranged GaN… read more here.
Keywords: aln substrates; ingan based; selective area; area growth ... See more keywords
MBE growth and donor doping of coherent ultrawide bandgap AlGaN alloy layers on single-crystal AlN substrates
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0037079
Abstract: Single-crystal Aluminum Nitride (AlN) crystals enable the epitaxial growth of ultrawide bandgap Al(Ga)N alloys with drastically lower extended defect densities. Here, we report the plasma-MBE growth conditions for high Al-composition AlGaN alloys on single-crystal AlN… read more here.
Keywords: aln substrates; crystal aln; ultrawide bandgap; single crystal ... See more keywords
Partial Discharge Characteristics of SiO₂/Si₃N₄ Electret Incorporated AlN Substrates
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Transportation Electrification"
DOI: 10.1109/tte.2024.3402618
Abstract: Partial discharge (PD) is one of the main reasons for the degradation of dielectric material and insulation of power semiconductors and systems they drive. Subsequently, it is a challenge for the electrification of transportation systems,… read more here.
Keywords: discharge characteristics; partial discharge; voltage; characteristics sio ... See more keywords