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Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.07.012
Abstract: Abstract Homoepitaxial non-polar AlN films were realized on m-plane ( 10 1 - 0 ) -oriented AlN single crystals by metalorganic chemical vapor deposition (MOCVD). The microstructural properties of m-plane AlN substrates and homoepitaxial films…
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Keywords:
plane;
growth;
homoepitaxial films;
substrates homoepitaxial ... See more keywords
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Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4995239
Abstract: A high free hole concentration in III-nitrides is important for next generation optoelectronic and high power electronic devices. The free hole concentration exceeding 1018 cm−3 and resistivity as low as 0.7 Ω cm are reported for p-GaN…
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Keywords:
aln substrates;
aln;
high free;
concentration ... See more keywords
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Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5022298
Abstract: Triangular-lattice nanopillar-array templates with a lattice constant of 280 nm and with AlN disks on top of the underlying Si pillars were prepared on 2-in. AlN/Si substrates through nanoimprint lithography and dry etching. Regularly arranged GaN…
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Keywords:
aln substrates;
ingan based;
selective area;
area growth ... See more keywords
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Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0037079
Abstract: Single-crystal Aluminum Nitride (AlN) crystals enable the epitaxial growth of ultrawide bandgap Al(Ga)N alloys with drastically lower extended defect densities. Here, we report the plasma-MBE growth conditions for high Al-composition AlGaN alloys on single-crystal AlN…
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Keywords:
aln substrates;
crystal aln;
ultrawide bandgap;
single crystal ... See more keywords