The Impact of AlN Templates on Strain Relaxation Mechanisms during the MOVPE Growth of UVB‐LED Structures
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DOI: 10.1002/crat.201900215
Abstract: Strain relaxation mechanisms in AlGaN based light emitting diodes emitting in the ultraviolet B spectral range (UVB‐LEDs) grown on different AlN/sapphire templates are analyzed by combining in situ reflectivity and curvature data with transmission electron… read more here.
Keywords: strain relaxation; relaxation; relaxation mechanisms; aln templates ... See more keywords
Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.01.011
Abstract: Abstract High-quality AlN templates fabricated by sputtering-deposition and post-deposition high-temperature annealing have great potential for deep ultraviolet light-emitting device applications. In this work, we fabricated AlN films on 6H-SiC substrates by sputtering and face-to-face annealing… read more here.
Keywords: aln; sic substrates; sputtering deposition; aln templates ... See more keywords
Crystalline quality improvement of face-to-face annealed MOVPE-grown AlN on vicinal sapphire substrate with sputtered nucleation layer
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2020.125722
Abstract: Abstract Face-to-face annealed metalorganic vapor phase epitaxy (MOVPE)- grown AlN templates with sputtered AlN nucleation layers (FFA MOSp-AlN templates) were fabricated on vicinal sapphire substrates. The sputtered thin AlN layer supplies AlN seeds that are… read more here.
Keywords: movpe grown; face annealed; face; aln ... See more keywords
Effect of MOVPE growth conditions on AlN films on annealed sputtered AlN templates with nano-striped patterns
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2021.126237
Abstract: Abstract The metalorganic vapor phase epitaxial (MOVPE) growth of AlN films was performed on face-to-face annealed sputtered AlN templates (FFA Sp-AlN) having a nano-striped pattern with a period of 300 nm and depth of 120 nm. Then,… read more here.
Keywords: growth; growth conditions; aln; aln templates ... See more keywords
Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templates
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DOI: 10.1039/c9ce01151j
Abstract: Process diagram for achieving pure Ga-polar and site-controlled growth of n-GaN nanowires on conductive n-Si-AlN templates using MOVPE. read more here.
Keywords: mask less; gan nanowires; less movpe; site ... See more keywords
Heteroepitaxial growth of ε-(AlxGa1−x)2O3 alloy films on c-plane AlN templates by mist chemical vapor deposition
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5021296
Abstract: In this study, e-(AlxGa1−x)2O3 alloy films were grown on c-plane AlN templates by mist chemical vapor deposition. The Al content of two samples was determined by Rutherford backscattering analysis. The lattice constant of the e-(AlxGa1−x)2O3… read more here.
Keywords: alxga1 2o3; plane aln; 2o3 alloy; aln templates ... See more keywords
Extremely high internal quantum efficiency of AlGaN-based quantum wells on face-to-face annealed sputter-deposited AlN templates
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DOI: 10.35848/1882-0786/ac3802
Abstract: This study investigated the influence of high-quality AlN templates on the internal quantum efficiency (IQE) of AlGaN-based multiple quantum wells (MQWs) using photoluminescence spectroscopy. An extremely high IQE of 90% at room temperature was obtained… read more here.
Keywords: quantum; quantum efficiency; internal quantum; face ... See more keywords