Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices
Sign Up to like & getrecommendations! Published in 2017 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.02.147
Abstract: Abstract Nanoindentation measurements along with atomic force microscopy, X-ray diffraction, and residual stress analyses on the basis of Raman measurements have been performed to characterize stress-tailored AlN thin films grown using reactive RF magnetron sputtering.… read more here.
Keywords: stress tailored; thin films; aln thin; stress ... See more keywords
Growth assessment and scrutinize dielectric reliability of c-axis oriented insulating AlN thin films in MIM structures for microelectronics applications
Sign Up to like & getrecommendations! Published in 2018 at "Materials Chemistry and Physics"
DOI: 10.1016/j.matchemphys.2018.08.013
Abstract: Abstract The present study reports the effect of bottom electrodes (Al, Pt & Ti) on the texture, piezoelectric characteristics, dielectric properties and leakage current behavior of reactive DC magnetron sputtered AlN thin films. X-ray diffraction… read more here.
Keywords: growth; aln thin; thin films; dielectric reliability ... See more keywords
A Strategy for Extracting Full Material Coefficients of AlN Thin Film Based on Resonance Method
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13040513
Abstract: AlN thin film is widely used in piezoelectric MEMS devices, and the accurate characterizations of its material coefficients are critical for the optimization of the AlN thin film process and the design of AlN thin-film-based… read more here.
Keywords: material coefficients; strategy; thin film; film based ... See more keywords
Optimal Growth Conditions for Forming c-Axis (002) Aluminum Nitride Thin Films as a Buffer Layer for Hexagonal Gallium Nitride Thin Films Produced with In Situ Continual Radio Frequency Sputtering
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13091546
Abstract: Aluminum nitride (AlN) thin-film materials possess a wide energy gap; thus, they are suitable for use in various optoelectronic devices. In this study, AlN thin films were deposited using radio frequency magnetron sputtering with an… read more here.
Keywords: thin films; film; aln thin; aluminum nitride ... See more keywords