Ultra-thin gate insulator of atomic-layer-deposited AlO x and HfO x for amorphous InGaZnO thin-film transistors
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DOI: 10.1088/1361-6528/acc742
Abstract: To strengthen the downscaling potential of top-gate amorphous oxide semiconductor (AOS) thin-film transistors (TFTs), the ultra-thin gate insulator (GI) was comparatively implemented using the atomic-layer-deposited (ALD) AlO x and HfO x . Both kinds of… read more here.
Keywords: hfo; alo hfo; ultra thin; gate ... See more keywords