Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric
Sign Up to like & getrecommendations! Published in 2019 at "Micromachines"
DOI: 10.3390/mi10070446
Abstract: Resistive random access memory (RRAM) devices with Ni/AlOx/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlOx) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of… read more here.
Keywords: solution based; rram devices; alox; rram ... See more keywords
Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlOx/TiOy Nanolaminates
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DOI: 10.3390/nano13071256
Abstract: Super-high dielectric constant (k) AlOx/TiOy nanolaminates (ATO NLs) are deposited by an atomic layer deposition technique for application in next-generation electronics. Individual multilayers with uniform thicknesses are formed for the ATO NLs. With an increase… read more here.
Keywords: tioy; super high; alox; ato nls ... See more keywords