Characterization of N-type and P-type Aluminum Antimonides on Si substrates for room-temperature optoelectronic devices
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DOI: 10.1016/j.mssp.2018.08.007
Abstract: Abstract To develop Aluminum Antimonide (AlSb) -based optoelectronic devices on Si substrates, AlSb films were investigated for a good crystalline quality and suitable optical and electrical properties. Under an optimized growth condition by RF-magnetron sputtering… read more here.
Keywords: optoelectronic devices; alsb based; alsb films; based optoelectronic ... See more keywords