Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Applied Physics"
DOI: 10.1063/5.0054045
Abstract: We report normally-off operations in partially-gate-recessed Al x Ti y O(AlTiO)/AlGaN/GaN metal-insulator-semiconductor (MIS) field-effect transistors (FETs), where aluminum titanium oxide AlTiO, an alloy of Al 2 O 3 and TiO 2, is employed as a… read more here.
Keywords: interface charge; altio algan; algan gan; charge ... See more keywords