Articles with "altio algan" as a keyword



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Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering

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Published in 2021 at "Journal of Applied Physics"

DOI: 10.1063/5.0054045

Abstract: We report normally-off operations in partially-gate-recessed Al x Ti y O(AlTiO)/AlGaN/GaN metal-insulator-semiconductor (MIS) field-effect transistors (FETs), where aluminum titanium oxide AlTiO, an alloy of Al 2 O 3 and TiO 2, is employed as a… read more here.

Keywords: interface charge; altio algan; algan gan; charge ... See more keywords