Effects of Al thickness on one-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering
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DOI: 10.1016/j.matlet.2017.07.103
Abstract: Abstract The effects of Al layer thickness on one-step aluminium-assisted crystallization of Ge on Si have been investigated and a better understanding of the Ge growth mechanism has been obtained. The thickness of the final… read more here.
Keywords: step aluminium; aluminium assisted; one step; assisted crystallization ... See more keywords