Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content
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DOI: 10.1002/admi.202301016
Abstract: (AlxGa1–x)2O3 is an ultrawide‐bandgap semiconductor with a high critical electric field for next‐generation high‐power transistors and deep‐ultraviolet photodetectors. While (010)‐(AlxGa1–x)2O3 films have been studied, the recent availability of (100), ( 2¯$\bar 2$ 01)‐Ga2O3 substrates have… read more here.
Keywords: 2o3 films; microscopic spectroscopic; aluminum content; alxga1 2o3 ... See more keywords
Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method
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DOI: 10.1002/admi.202400122
Abstract: With comprehensive crystal growth experiments of β‐(AlxGa1‐x)2O3 by the Czochralski method this work concludes a maximum [Al] = 40 mol% (35 mol% in the melt) that can be incorporated into β‐Ga2O3 crystal lattice while keeping… read more here.
Keywords: solid solution; method; solution limits; alxga1 2o3 ... See more keywords
Structural, Optical, and Electronic Properties of Epitaxial β‐(AlxGa1‐x)2O3 Films for Optoelectronic Devices
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Optical Materials"
DOI: 10.1002/adom.202400724
Abstract: Bandgap engineering in monoclinic gallium oxide (β‐Ga2O3) is a powerful strategy for designing semiconductor optoelectronic devices with specific functionalities. In this work, aluminum doping is utilized to modulate the bandgap of Ga2O3. By growing epitaxial… read more here.
Keywords: structural optical; epitaxial alxga1; bandgap; 2o3 films ... See more keywords
Bandgap Tuning of β‐(AlxGa1‐x)2O3 Nanosheets via Liquid Metal Interface Engineering
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Optical Materials"
DOI: 10.1002/adom.202501116
Abstract: Precise engineering of the electronic band structure in 2D metal oxides is essential for advancing optical and electronic nanodevices, yet achieving compositional control at the nanoscale remains challenging. Here, a low‐temperature liquid metal‐based synthesis method… read more here.
Keywords: 2o3 nanosheets; liquid metal; metal interface; metal ... See more keywords
High Gain, Low Voltage Solar-Blind Deep UV Photodetector Based on Ga2O3/(AlxGa1-x)2O3/GaN nBp Heterojunction.
Sign Up to like & getrecommendations! Published in 2025 at "Small"
DOI: 10.1002/smll.202406989
Abstract: In this study an (AlxGa1-x)2O3 barrier layer is inserted between β-Ga2O3 and GaN in a p-GaN/n-Ga2O3 diode photodetector, causing the dark current to decrease considerably, and device performance to improve significantly. The β-Ga2O3/β-(AlxGa1-x)2O3/GaN n-type/Barrier/p-type photodetector… read more here.
Keywords: 2o3 gan; photodetector; ga2o3; solar blind ... See more keywords
Band alignments of SiO2 and HfO2 dielectrics with (AlxGa1-x)2O3 film (0≤x≤0.53) grown on Ga2O3 buffer layer on sapphire
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2018.02.177
Abstract: Abstract We report the band alignment of SiO2 and HfO2 with (AlxGa1-x)2O3 (0 ≤ x ≤ 0.53) film utilizing the high resolution X-ray photoelectron spectroscopy (XPS) measurements. (AlxGa1-x)2O3 film were epitaxially grown on sapphire with Ga2O3 buffer layer. The… read more here.
Keywords: alxga1 2o3; band; band alignment; 2o3 film ... See more keywords
Optical and electronic properties of (Al Ga1−)2O3/Al2O3 (x>0.4) films grown by magnetron sputtering
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2021.158765
Abstract: Abstract Systematic investigations of the optical and electronic properties are reported for ultrathin (AlxGa1-x)2O3/Al2O3 films with higher Al contents x (> 0.4) prepared by magnetron sputtering method. The X-ray diffraction results revealed the films were… read more here.
Keywords: alxga1 2o3; optical electronic; 2o3 al2o3; electronic properties ... See more keywords
Heteroepitaxial growth of ε-(AlxGa1−x)2O3 alloy films on c-plane AlN templates by mist chemical vapor deposition
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5021296
Abstract: In this study, e-(AlxGa1−x)2O3 alloy films were grown on c-plane AlN templates by mist chemical vapor deposition. The Al content of two samples was determined by Rutherford backscattering analysis. The lattice constant of the e-(AlxGa1−x)2O3… read more here.
Keywords: alxga1 2o3; plane aln; 2o3 alloy; aln templates ... See more keywords
Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5037095
Abstract: In this work, we demonstrate modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors. The maximum sheet carrier density for a two-dimensional electron gas (2DEG) in a β-(AlxGa1-x)2O3/Ga2O3 heterostructure is limited by the conduction band offset and… read more here.
Keywords: 2o3 ga2o3; alxga1 2o3; double heterostructure; heterostructure field ... See more keywords
First-principles surface energies for monoclinic Ga2O3 and Al2O3 and consequences for cracking of (AlxGa1−x)2O3
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DOI: 10.1063/5.0019915
Abstract: Crack formation limits the growth of (AlxGa1−x)2O3 epitaxial films on Ga2O3 substrates. We employ first-principles calculations to determine the brittle fracture toughness of such films for three growth orientations of the monoclinic structure: [100], [010],… read more here.
Keywords: ga2o3 al2o3; monoclinic ga2o3; alxga1 2o3; first principles ... See more keywords
α-(AlxGa1−x)2O3 single-layer and heterostructure buffers for the growth of conductive Sn-doped α-Ga2O3 thin films via mist chemical vapor deposition
Sign Up to like & getrecommendations! Published in 2020 at "APL Materials"
DOI: 10.1063/5.0023041
Abstract: A third generation mist chemical vapor deposition (3rd G mist CVD) system was used to grow six single-layer and two heterostructure α-(AlxGa1−x)2O3 buffers on c-plane sapphire substrates for the subsequent deposition of conductive Sn-doped α-Ga2O3… read more here.
Keywords: single layer; ga2o3; layer; alxga1 2o3 ... See more keywords