Band alignments of SiO2 and HfO2 dielectrics with (AlxGa1-x)2O3 film (0≤x≤0.53) grown on Ga2O3 buffer layer on sapphire
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2018.02.177
Abstract: Abstract We report the band alignment of SiO2 and HfO2 with (AlxGa1-x)2O3 (0 ≤ x ≤ 0.53) film utilizing the high resolution X-ray photoelectron spectroscopy (XPS) measurements. (AlxGa1-x)2O3 film were epitaxially grown on sapphire with Ga2O3 buffer layer. The… read more here.
Keywords: alxga1 2o3; band; band alignment; 2o3 film ... See more keywords
Optical and electronic properties of (Al Ga1−)2O3/Al2O3 (x>0.4) films grown by magnetron sputtering
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2021.158765
Abstract: Abstract Systematic investigations of the optical and electronic properties are reported for ultrathin (AlxGa1-x)2O3/Al2O3 films with higher Al contents x (> 0.4) prepared by magnetron sputtering method. The X-ray diffraction results revealed the films were… read more here.
Keywords: alxga1 2o3; optical electronic; 2o3 al2o3; electronic properties ... See more keywords
Heteroepitaxial growth of ε-(AlxGa1−x)2O3 alloy films on c-plane AlN templates by mist chemical vapor deposition
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5021296
Abstract: In this study, e-(AlxGa1−x)2O3 alloy films were grown on c-plane AlN templates by mist chemical vapor deposition. The Al content of two samples was determined by Rutherford backscattering analysis. The lattice constant of the e-(AlxGa1−x)2O3… read more here.
Keywords: alxga1 2o3; plane aln; 2o3 alloy; aln templates ... See more keywords
Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5037095
Abstract: In this work, we demonstrate modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors. The maximum sheet carrier density for a two-dimensional electron gas (2DEG) in a β-(AlxGa1-x)2O3/Ga2O3 heterostructure is limited by the conduction band offset and… read more here.
Keywords: 2o3 ga2o3; alxga1 2o3; double heterostructure; heterostructure field ... See more keywords
First-principles surface energies for monoclinic Ga2O3 and Al2O3 and consequences for cracking of (AlxGa1−x)2O3
Sign Up to like & getrecommendations! Published in 2020 at "APL Materials"
DOI: 10.1063/5.0019915
Abstract: Crack formation limits the growth of (AlxGa1−x)2O3 epitaxial films on Ga2O3 substrates. We employ first-principles calculations to determine the brittle fracture toughness of such films for three growth orientations of the monoclinic structure: [100], [010],… read more here.
Keywords: ga2o3 al2o3; monoclinic ga2o3; alxga1 2o3; first principles ... See more keywords
α-(AlxGa1−x)2O3 single-layer and heterostructure buffers for the growth of conductive Sn-doped α-Ga2O3 thin films via mist chemical vapor deposition
Sign Up to like & getrecommendations! Published in 2020 at "APL Materials"
DOI: 10.1063/5.0023041
Abstract: A third generation mist chemical vapor deposition (3rd G mist CVD) system was used to grow six single-layer and two heterostructure α-(AlxGa1−x)2O3 buffers on c-plane sapphire substrates for the subsequent deposition of conductive Sn-doped α-Ga2O3… read more here.
Keywords: single layer; ga2o3; layer; alxga1 2o3 ... See more keywords
γ-phase inclusions as common structural defects in alloyed β-(AlxGa1−x)2O3 and doped β-Ga2O3 films
Sign Up to like & getrecommendations! Published in 2021 at "APL Materials"
DOI: 10.1063/5.0038861
Abstract: β-Ga2O3 is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy, we find the thermodynamically unstable γ-phase is a ubiquitous structural defect… read more here.
Keywords: phase inclusions; phase; alxga1 2o3; ga2o3 films ... See more keywords
Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1−x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity
Sign Up to like & getrecommendations! Published in 2021 at "AIP Advances"
DOI: 10.1063/5.0055874
Abstract: A bandgap bowing parameter of 0.4 ± 0.2 eV for β-(AlxGa1−x)2O3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of… read more here.
Keywords: low temperature; alxga1 2o3; bandgap bowing; bowing parameter ... See more keywords
High-frequency and below bandgap anisotropic dielectric constants in α-(AlxGa1−x)2O3 ( 0≤x≤1)
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0064528
Abstract: A Mueller matrix spectroscopic ellipsometry approach was used to investigate the anisotropic dielectric constants of corundum α-(AlxGa1−x)2O3 thin films in their below bandgap spectral regions. The sample set was epitaxially grown using plasma-assisted molecular beam… read more here.
Keywords: alxga1 2o3; dielectric constants; high frequency; anisotropic dielectric ... See more keywords
Metalorganic chemical vapor deposition of β-(AlxGa1−x)2O3 thin films on (001) β-Ga2O3 substrates
Sign Up to like & getrecommendations! Published in 2023 at "APL Materials"
DOI: 10.1063/5.0142746
Abstract: Phase pure β-(AlxGa1−x)2O3 thin films are grown on (001) oriented β-Ga2O3 substrates via metalorganic chemical vapor deposition. By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained β-(AlxGa1−x)2O3 films is demonstrated… read more here.
Keywords: alxga1 2o3; 2o3 thin; ga2o3 substrates; 001 ga2o3 ... See more keywords