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Published in 2018 at "Journal of Luminescence"
DOI: 10.1016/j.jlumin.2018.06.034
Abstract: Abstract Luminescent properties of the AlxGa1-xN films with Si dopant concentration more than 1020 cm−3 grown by molecular beam epitaxy on sapphire substrates with AlN buffer film were investigate at room temperature. Time-resolved photoluminescence spectroscopy…
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Keywords:
sapphire;
spontaneous emission;
luminescence properties;
alxga1 aln ... See more keywords
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Published in 2019 at "Scientific Reports"
DOI: 10.1038/s41598-019-46628-4
Abstract: This work presents a systematic study of stress and strain of AlxGa1−xN/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction…
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Keywords:
study;
stress;
alxga1 aln;
composition ... See more keywords