Luminescence properties of heavily doped AlxGa1-xN/AlN films grown on sapphire substrate
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Luminescence"
DOI: 10.1016/j.jlumin.2018.06.034
Abstract: Abstract Luminescent properties of the AlxGa1-xN films with Si dopant concentration more than 1020 cm−3 grown by molecular beam epitaxy on sapphire substrates with AlN buffer film were investigate at room temperature. Time-resolved photoluminescence spectroscopy… read more here.
Keywords: sapphire; spontaneous emission; luminescence properties; alxga1 aln ... See more keywords
Strain-stress study of AlxGa1−xN/AlN heterostructures on c-plane sapphire and related optical properties
Sign Up to like & getrecommendations! Published in 2019 at "Scientific Reports"
DOI: 10.1038/s41598-019-46628-4
Abstract: This work presents a systematic study of stress and strain of AlxGa1−xN/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction… read more here.
Keywords: study; stress; alxga1 aln; composition ... See more keywords
Degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm
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DOI: 10.1063/5.0249739
Abstract: This study presents a comprehensive analysis of the structural and electrical properties of degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors (HEMTs) fabricated using low-temperature pulsed sputtering epitaxial growth. The investigation encompassed a range of… read more here.
Keywords: source drain; alxga1 aln; gan source; drain ... See more keywords