The effect of unintentional carbon incorporation on the electrical properties of AlGaAs grown by MOCVD
Sign Up to like & getrecommendations! Published in 2020 at "Optical Materials"
DOI: 10.1016/j.optmat.2020.110227
Abstract: Abstract The materials of AlxGa1-xAs, as a wide application semiconductor material, have attracted a lot of attention. However, the unintentional doping is as an unsolved problem of the influence of materials properties, and has always… read more here.
Keywords: carbon; unintentional carbon; carbon incorporation; alxga1 xas ... See more keywords
Designing of AlxGa1-xAs/CIGS tandem solar cell by analytical model
Sign Up to like & getrecommendations! Published in 2019 at "Solar Energy"
DOI: 10.1016/j.solener.2019.05.074
Abstract: Abstract In this work, a four-terminal AlxGa1-xAs/CuInGaSe2 tandem structure has been proposed by analytical model. To develop this model, the real experimental data for CIGS and AlxGa1-xAs cells has been used. Conversion efficiency of optimized… read more here.
Keywords: tandem solar; analytical model; alxga1 xas; model ... See more keywords
Laser-stimulated structural transformations in AlxGa1-xAs/GaAs system
Sign Up to like & getrecommendations! Published in 2019 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2019.05.057
Abstract: Abstract Structural changes in the AlxGa1-xAs thin films doped by Zn atoms on the semi-insulating GaAs substrate under irradiation by laser pulses (λ = 0.532 μm, τp = 10 ns) were investigated. The analysis of photoluminescence (PL), Raman spectroscopy and atomic… read more here.
Keywords: stimulated structural; surface; alxga1 xas; laser stimulated ... See more keywords
Precision etching for multi-level AlGaAs waveguides
Sign Up to like & getrecommendations! Published in 2017 at "Optical Materials Express"
DOI: 10.1364/ome.7.000895
Abstract: We present inductively-coupled-plasma, reactive-ion-etching (ICP-RIE) techniques with 2 orders of magnitude difference in etch rates, for the AlxGa1-xAs material system. These precise etching processes are used to produce waveguides in a multi-guide vertical integration (MGVI)… read more here.
Keywords: etching multi; multi level; alxga1 xas; xas ... See more keywords
Investigations on Cylindrical Surrounding Double-Gate (CSDG) MOSFET using AlxGa1-xAs/InP: Pt with La2O3 oxide layer for fabrication.
Sign Up to like & getrecommendations! Published in 2023 at "Recent patents on nanotechnology"
DOI: 10.2174/1872210517666230427163447
Abstract: INTRODUCTION The Cylindrical Surrounding Double-Gate MOSFET has been designed using Aluminium Gallium Arsenide in its arbitrary alloy form alongside Indium Phosphide with Lanthanum Dioxide as a high-ƙ dielectric material. METHOD The heterostructure based on the… read more here.
Keywords: surrounding double; cylindrical surrounding; mosfet; alxga1 xas ... See more keywords