AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Thermally Oxidized AlxGa2–xO3 Sidewalls
Sign Up to like & getrecommendations! Published in 2022 at "ACS Omega"
DOI: 10.1021/acsomega.2c00813
Abstract: AlGaN and GaN sidewalls were turned into AlxGa2–xO3 and Ga2O3, respectively, by thermal oxidation to improve the optoelectrical characteristics of deep ultraviolet (DUV) light-emitting diodes (LEDs). The thermally oxidized Ga2O3 is a single crystal with… read more here.
Keywords: oxidized alxga2; thermally oxidized; layer; alxga2 ... See more keywords