High ambipolar mobility in cubic boron arsenide revealed by transient reflectivity microscopy
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DOI: 10.1126/science.abn4727
Abstract: Semiconducting cubic boron arsenide (c-BAs) has been predicted to have carrier mobility of 1400 square centimeters per volt-second for electrons and 2100 square centimeters per volt-second for holes at room temperature. Using pump-probe transient reflectivity… read more here.
Keywords: mobility; high ambipolar; ambipolar mobility; microscopy ... See more keywords