Electron and hole mobilities in ambipolar MoS2 electric-double-layer transistor
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Applied Physics"
DOI: 10.1063/5.0016336
Abstract: We report transport measurements of ionic liquid-gated field-effect transistors with multilayer MoS2 channels. Ambipolar characteristics with high ON/OFF ratios (>105) are observed. The current–voltage characteristics agree well with those calculated using a simple model assuming… read more here.
Keywords: ambipolar mos2; hole mobilities; electron hole; mobilities ambipolar ... See more keywords
High-performance ambipolar MoS2 transistor enabled by indium edge contacts
Sign Up to like & getrecommendations! Published in 2021 at "Nanotechnology"
DOI: 10.1088/1361-6528/abe438
Abstract: The integration of electrical contact into 2D heterostructure is an essential approach to high-quality electronic nano-devices, especially field-effect transistors. However, high contact resistance with transition metal dichalcogenides such as molybdenum disulphide (MoS2)-based devices has been… read more here.
Keywords: mos2 transistor; performance ambipolar; ambipolar mos2; mos2 ... See more keywords