Robustness to ambipolarity and improvement to HF FOMs of dual-stacked-gate dielectrics underlap heterojunction TFETs
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DOI: 10.1007/s12648-020-01821-4
Abstract: This work presents a new TFET architecture which not only diminishes ambipolar current (IAMB) but also shows high on state current (ION), high ratio of ION to IOFF, and less off-state current (IOFF). Initially, to… read more here.
Keywords: robustness ambipolarity; state current; ambipolarity improvement; ambipolarity ... See more keywords