Pulsed laser melting of implant amorphized Si1-xGex thin films
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DOI: 10.1016/j.apsusc.2021.150408
Abstract: Abstract Nanosecond pulsed laser annealing using a frequency doubled Nd:YAG laser (λ = 532 nm) was performed on undoped implant amorphized Si and 40 nm Si1-xGex epitaxial thin films ranging from x = 0.1 to 0.5. Ge+ implants were used to… read more here.
Keywords: amorphized si1; implant amorphized; thin films; si1 xgex ... See more keywords