Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory
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DOI: 10.1002/advs.202408028
Abstract: Ovonic threshold switching (OTS) selectors based on amorphous chalcogenides can revolutionize 3D memory technology owing to their self‐selecting memory (SSM) behavior. However, the complex mechanism governing the memory writing operation limits compositional and device optimization.… read more here.
Keywords: memory; self selecting; polarity dependent; selecting memory ... See more keywords