Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate*
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DOI: 10.1088/1674-1056/26/11/116802
Abstract: Polycrystalline Ge1−x (poly-Ge1−x Sn x ) alloy thin films with high Sn content (> 10%) were fabricated by cosputtering amorphous GeSn (a-GeSn) on Ge (100) wafers and subsequently pulsed laser annealing with laser energy density… read more here.
Keywords: amorphous gesn; gesn films; gesn; laser annealing ... See more keywords