Simulation of the effect of deep defects created by hydrogen on the performance of amorphous indium gallium zinc oxide thin film transistor (a-IGZO TFT)
Sign Up to like & getrecommendations! Published in 2019 at "Materials Research Express"
DOI: 10.1088/2053-1591/ab11a5
Abstract: Amorphous indium gallium zinc oxide (a-IGZO) are promising for developing thin film transistors (TFTs) because of their large electron mobility, small threshold voltage (Vth), and low temperature fabrication process. In this study, we have investigated… read more here.
Keywords: amorphous indium; indium gallium; thin film; effect ... See more keywords
Drain-Bias Transient Instability of Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3012945
Abstract: High-voltage amorphous indium–gallium–zinc oxide thin-film transistors can be monolithically integrated into the system-on-chip platform as input–output bridges. However, a transient instability showing substantial ON-current degradation under high drain bias is discovered. This drain-bias transient instability… read more here.
Keywords: amorphous indium; instability; drain bias; indium gallium ... See more keywords
Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance
Sign Up to like & getrecommendations! Published in 2021 at "Nanomaterials"
DOI: 10.3390/nano11020522
Abstract: In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O2/(Ar+O2) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwave photoconductivity… read more here.
Keywords: gallium zinc; amorphous indium; zinc oxide; performance ... See more keywords