The effect of Gamma irradiation on the stability of amorphous InGaZnO metal-semiconductor-metal UV photodetectors
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Non-crystalline Solids"
DOI: 10.1016/j.jnoncrysol.2020.120292
Abstract: Abstract Crystalline semiconductors are durable, but are susceptible to damage by radiation. This study irradiates amorphous InGaZnO (a-IGZO) metal-semiconductor-metal (MSM) photodetectors (PDs) with gamma rays up to 100 kilo-Gray (kGy). The current-voltage (I-V) measurements show… read more here.
Keywords: semiconductor metal; amorphous ingazno; metal; cumulative dose ... See more keywords
Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors
Sign Up to like & getrecommendations! Published in 2018 at "Results in Physics"
DOI: 10.1016/j.rinp.2018.11.029
Abstract: Abstract We investigated the chemical bonds in nitrogen-doped amorphous InGaZnO (a-IGZO:N) thin films with an X-ray photoelectron spectrometer (XPS). The doped nitrogen atoms preferentially combined with Ga cations and formed stable Ga N bonds for… read more here.
Keywords: nitrogen doped; stable bonds; amorphous ingazno; chemical bonds ... See more keywords
Light-illumination stability of amorphous InGaZnO thin film transistors in oxygen and moisture ambience
Sign Up to like & getrecommendations! Published in 2019 at "Solid-State Electronics"
DOI: 10.1016/j.sse.2018.12.020
Abstract: Abstract The light-illumination stability of amorphous InGaZnO Thin Film Transistors (a-IGZO TFTs) in oxygen and moisture ambience was in-depth characterized by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. With the illuminated light wavelength decreasing, both… read more here.
Keywords: amorphous ingazno; illumination stability; light illumination; stability amorphous ... See more keywords
Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress
Sign Up to like & getrecommendations! Published in 2024 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ad1b15
Abstract: Amorphous InGaZnO (a-IGZO) has attracted a lot of attention as a high-mobility channel material for thin film transistors (TFTs). However, the instability mechanism involving threshold voltage and subthreshold swing (SS) in a-IGZO TFTs still requires… read more here.
Keywords: threshold voltage; bias stress; amorphous ingazno;
Degradation Mechanisms of Amorphous InGaZnO Thin-Film Transistors Used in Foldable Displays by Dynamic Mechanical Stress
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2016.2631597
Abstract: Foldable displays represent one of the most attractive next-generation display applications. Therefore, it is critical to analyze the effects of mechanical stress on amorphous InGaZnO (a-IGZO) thin-film-transistors (TFTs) in order to apply them to foldable… read more here.
Keywords: mechanical stress; foldable displays; dynamic mechanical; thin film ... See more keywords
Asymmetry Degradation Behavior Under Forward and Backward Overlap Dynamical Stress in Large-Size Amorphous InGaZnO TFT
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3435174
Abstract: In this work, the degradation behaviors for large size amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) under realistic waveforms in active driving circuit are revealed, and the corresponding degradation mechanisms are analyzed. When the back half… read more here.
Keywords: size amorphous; effect; degradation; large size ... See more keywords
Current and Gate Capacitance Models of Amorphous InGaZnO Transistors With Double-Layer Electrolytic Gate Insulation
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3505140
Abstract: Electrolytic double-layer gate insulation transistors (EDLGITs) have gained significant attention recently due to their features for achieving high-density charge accumulation and low operating voltage. This is primarily attributed to the large capacitance of the electrolyte… read more here.
Keywords: insulation; double layer; gate insulation; amorphous ingazno ... See more keywords
Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13122099
Abstract: Amorphous InGaZnO thin film transistors (a-IGZO TFTs) with double-stacked channel layers (DSCL) were quite fit for ultraviolet (UV) light detection, where the best DSCL was prepared by the depositions of oxygen-rich (OR) IGZO followed by… read more here.
Keywords: stacked channel; ingazno thin; amorphous ingazno; double stacked ... See more keywords
One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12193481
Abstract: Amorphous InGaZnO (a-InGaZnO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in next-generation displays. However, balancing the transmission performance and low-temperature deposition is the primary obstacle in… read more here.
Keywords: amorphous ingazno; ingazno tfts; temperature; room temperature ... See more keywords