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Published in 2018 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.11.026
Abstract: Abstract Saving energy and reducing operation parameter fluctuations remain crucial for enabling resistive random access memory (RRAM) to emerge as a universal memory. In this work, we report a resistive memory device based on an…
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Keywords:
resistive memory;
surface;
amorphous mgo;
mgo film ... See more keywords