Thermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switching.
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DOI: 10.1021/acsami.2c04618
Abstract: Metal-oxide-metal (MOM) devices based on niobium oxide exhibit threshold switching (or current-controlled negative differential resistance) due to thermally induced conductivity changes produced by Joule heating. A detailed understanding of the device characteristics therefore relies on… read more here.
Keywords: thin films; conductivity; amorphous nbox; nbox thin ... See more keywords