Enhancement-mode thin film transistor using amorphous phosphorus-doped Indium–Zinc–Tin-Oxide channel layer
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DOI: 10.1016/j.mssp.2021.106228
Abstract: Abstract In this research, we investigated optical properties of amorphous Phosphorus-doped Indium–Zinc–Tin-Oxide (a-IZTO:P) thin films and their feasibility as the channel layer for thin film transistors (TFTs). The a-IZTO:P TFT with bottom-gate top-contact structure was… read more here.
Keywords: phosphorus doped; zinc tin; doped indium; amorphous phosphorus ... See more keywords