Point defects production and energy thresholds for displacements in crystalline and amorphous SiC
Sign Up to like & getrecommendations! Published in 2018 at "Computational Materials Science"
DOI: 10.1016/j.commatsci.2018.04.063
Abstract: Abstract Molecular dynamics (MD) simulations are performed using the Tersoff + ZBL potential to determine the values and directional dependence of the threshold displacement energies (TDEs) for the production of point defects by carbon and silicon primary… read more here.
Keywords: production; energy; point defects; pka ... See more keywords
An ultra high-endurance memristor using back-end-of-line amorphous SiC
Sign Up to like & getrecommendations! Published in 2024 at "Scientific Reports"
DOI: 10.1038/s41598-024-64499-2
Abstract: Integrating resistive memory or neuromorphic memristors into mainstream silicon technology can be substantially facilitated if the memories are built in the back-end-of-line (BEOL) and stacked directly above the logic circuitries. Here we report a promising… read more here.
Keywords: memristor; back end; amorphous sic; endurance ... See more keywords