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Published in 2019 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.201900548
Abstract: Schottky diode FET logic (SDFL) ring oscillator circuits comprising metal‐semiconductor field‐effect transistors (MESFETs) based on amorphous zinc‐tin‐oxide (ZTO) n‐channels are presented. The ZTO channel layers are deposited entirely at room temperature by long‐throw magnetron sputtering.…
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Keywords:
room temperature;
zinc tin;
amorphous zinc;
temperature ... See more keywords
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Published in 2019 at "Materials Letters"
DOI: 10.1016/j.matlet.2018.12.100
Abstract: Abstract The pure and Ni2+ sensitized monodisperse amorphous zinc tin oxide (a-ZTO) microcubes were synthesized via an in-situ precipitation method and subsequent wet impregnation. XPS results revealed that Ni2+ sensitization increased the relative content of…
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Keywords:
amorphous zinc;
zto microcubes;
ni2 sensitized;
sensitized monodisperse ... See more keywords
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Published in 2021 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.0c10511
Abstract: We report the fabrication of amorphous zinc tin oxide (ZTO) thin films using rf magnetron sputtering and rapid postannealing. A vertically graded composition alloy (Zn1–xSnxO) is constructed in a s...
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Keywords:
tin oxide;
amorphous zinc;
thin films;
zinc tin ... See more keywords
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Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5038941
Abstract: Room temperature fabrication of amorphous oxide semiconductors enables a cost-efficient production of devices on flexible and large-area substrates. Metal-semiconductor field-effect transistors using amorphous zinc-tin-oxide (ZTO) thin films with a cation composition of 1:1 Zn:Sn are…
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Keywords:
zinc tin;
amorphous zinc;
room temperature;
room ... See more keywords