Analog switching characteristics in TiW/Al2O3/Ta2O5/Ta RRAM devices
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5100075
Abstract: In this letter, we report analog switching characteristics in an analog resistive random access memory device based on a TiW/Al2O3/Ta2O5/Ta stack. For this device, both oxides were grown by using an atomic layer deposition system… read more here.
Keywords: al2o3 ta2o5; switching characteristics; analog switching; tiw al2o3 ... See more keywords
Forming-Free Tunable Analog Switching in WOx/TaOx Heterojunction for Emulating Electronic Synapses
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15248858
Abstract: In this work, the sputtered deposited WOx/TaOx switching layer has been studied for resistive random-access memory (RRAM) devices. Gradual SET and RESET behaviors with reliable device-to-device variability were obtained with DC voltage sweep cycling without… read more here.
Keywords: wox taox; forming free; analog switching; tunable analog ... See more keywords