Analysis of Crystalline Defects Caused by Growth on Partially Planarized Spalled (100) GaAs Substrates
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DOI: 10.3390/cryst13040681
Abstract: We analyze the effect of growth on non-(100) surfaces resulting from incomplete planarization of spalled GaAs wafers on the defect structure of GaAs solar cell layers grown by hydride vapor phase epitaxy (HVPE). Controlled spalling… read more here.
Keywords: growth; gaas substrates; crystalline defects; faceted surfaces ... See more keywords