Analysis of the Forward I–V Characteristics of Al-Implanted 4H-SiC p-i-n Diodes with Modeling of Recombination and Trapping Effects Due to Intrinsic and Doping-Induced Defect States
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DOI: 10.1007/s11664-017-5916-8
Abstract: In this paper, the impact of silicon carbide intrinsic defect states, such as Z1/2 and EH6/7 centers, on the forward current–voltage curves of aluminum (Al)-implanted 4H-SiC p-i-n diodes is investigated by means of a physics-based… read more here.
Keywords: defect states; analysis forward; characteristics implanted; sic diodes ... See more keywords
Doppler Analysis of Forward Scattering Radar With Opportunistic Signals From LEO Satellites
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DOI: 10.1109/access.2022.3214844
Abstract: Recently microwave communication signals from low Earth orbit (LEO) satellites have been proposed to be used to detect flying objects in a ground-based forward scattering passive radar setup. In this work the Doppler shift and… read more here.
Keywords: doppler analysis; forward scattering; analysis forward; leo satellites ... See more keywords