Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy
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DOI: 10.1134/s1063782618150162
Abstract: Magnetoresistive random access memory (MRAM) has some advantages over other types of memory. However, MRAM has one substantial drawback: the current density and magnetic field that must be applied to switch the spin-valve free layer… read more here.
Keywords: spin valve; mram; switching characteristics; analysis switching ... See more keywords