2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2773560
Abstract: A continuous 2-D analytical drain current model of double-gate (DG) heterojunction tunnel field-effect transistors (HJTFETs) with a SiO2/HfO2 stacked gate-oxide structures has been presented in this paper. The surface potential model has been developed by… read more here.
Keywords: analytical drain; drain; model double; current model ... See more keywords
Analytical Drain Current and Capacitance Model for Amorphous InGaZnO TFTs Considering Temperature Characteristics
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3009086
Abstract: Analytical drain current and capacitance model is developed for the amorphous InGaZnO (a-IGZO) thin-film transistor (TFT). The numerical Pao–Sah model is presented to describe the temperature characteristics considering the deep and tail trap states in… read more here.
Keywords: temperature characteristics; drain current; current capacitance; analytical drain ... See more keywords