A New Analytical Large-Signal Model for Quasi-Ballistic Transport in InGaAs HEMTs Accommodating Dislocation Scattering
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DOI: 10.3390/mi14051023
Abstract: A surface-potential-based analytical large-signal model, which is applicable to both ballistic and quasi-ballistic transport in InGaAs high electron mobility transistors, is developed. Based on the one-flux method and a new transmission coefficient, a new two-dimensional… read more here.
Keywords: quasi ballistic; analytical large; signal model; ballistic transport ... See more keywords