Broadband, wide-angle antireflection in GaAs through surface nano-structuring for solar cell applications
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DOI: 10.1038/s41598-020-63327-7
Abstract: We demonstrate broadband and wide-angle antireflective surface nanostructuring in GaAs semiconductors using variable dose electron-beam lithography (EBL). Various designed structures are written with EBL on a positive EB-resist coated GaAs and developed followed by shallow… read more here.
Keywords: wide angle; surface; gaas; angle antireflection ... See more keywords