Ab Initio Study of Graphene/hBN Van der Waals Heterostructures: Effect of Electric Field, Twist Angles and p-n Doping on the Electronic Properties
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DOI: 10.3390/nano12122118
Abstract: In this work, we study the structural and electronic properties of boron nitride bilayers sandwiched between graphene sheets. Different stacking, twist angles, doping, as well as an applied external gate voltage, are reported to induce… read more here.
Keywords: electric field; twist angles; electronic properties; field ... See more keywords