Angular dependences of SiO 2 etch rates at different bias voltages in CF 4 , C 2 F 6 , and C 4 F 8 plasmas
Sign Up to like & getrecommendations! Published in 2017 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2017.03.047
Abstract: Abstract The angular dependences of SiO 2 etch rates at different bias voltages for in CF 4 , C 2 F 6 , and C 4 F 8 plasmas were investigated using a Faraday cage… read more here.
Keywords: dependences sio; etch rates; rates different; sio etch ... See more keywords
Angular Dependences of ESR Parameters in Antiferroquadrupolar Phase of CeB6
Sign Up to like & getrecommendations! Published in 2017 at "Acta Physica Polonica A"
DOI: 10.12693/aphyspola.131.1060
Abstract: Angular Dependences of ESR Parameters in Antiferroquadrupolar Phase of CeB6 A.V. Semenoa,∗, M.I. Gilmanov, N.E. Sluchanko, V.N. Krasnorussky, N.Y. Shitsevalova, V.B. Filipov, K. Flachbart and S.V. Demishev Prokhorov General Physics Institute, RAS, 119991, Vavilov Str.… read more here.
Keywords: parameters antiferroquadrupolar; antiferroquadrupolar phase; physics; esr parameters ... See more keywords