Wafer-scale integration of monolayer MoS2via residue-free support layer etching and angular strain suppression.
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DOI: 10.1039/d5nr03068d
Abstract: A crack-free and residue-free transfer technique for large-area, atomically-thin 2D transition metal dichalcogenides (TMDCs) such as MoS2 and WS2 is critical for their integration into next-generation electronic devices, either as channel materials replacing silicon or… read more here.
Keywords: spectroscopy; support layer; residue free; angular strain ... See more keywords