Dielectric-on-Dielectric Achieved on SiO2 in Preference to W by Water-free Chemical Vapor Depositions with Aniline Passivation.
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DOI: 10.1021/acsami.3c02278
Abstract: Selective and smooth dielectric-on-dielectric was achieved by water-free single-precursor chemical vapor deposition (CVD) processes with the help of aniline passivation. Aniline selective passivation was demonstrated on W surfaces in preference to SiO2 at 250, 300,… read more here.
Keywords: aniline passivation; dielectric achieved; water free; passivation ... See more keywords