Artificial Anisotropy in Ge2Sb2Te5 Thin Films after Femtosecond Laser Irradiation
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DOI: 10.3390/ma15103499
Abstract: Ge2Sb2Te5 (GST225) looks to be a promising material for rewritable memory devices due to its relatively easy processing and high optical and electrophysical contrast for the crystalline and amorphous phases. In the present work, we… read more here.
Keywords: femtosecond laser; artificial anisotropy; ge2sb2te5 thin; anisotropy ... See more keywords