Monitoring of stress–strain evolution in thin films by reflection anisotropy spectroscopy and synchrotron X-ray diffraction
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Materials Science"
DOI: 10.1007/s10853-017-0909-9
Abstract: Abstract With progressing miniaturization of modern electronic devices, interconnects become increasingly smaller. Additionally, as electronic devices move away from rigid substrates toward flexible ones, understanding their mechanical and structural stability is becoming crucial. In this… read more here.
Keywords: thin films; ray diffraction; synchrotron ray; anisotropy spectroscopy ... See more keywords
Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)
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DOI: 10.3390/mi12050502
Abstract: Reflectance anisotropy spectroscopy (RAS), which was originally invented to monitor epitaxial growth, can—as we have previously shown—also be used to monitor the reactive ion etching of III/V semiconductor samples in situ and in real time,… read more here.
Keywords: spectroscopy ras; anisotropy spectroscopy; spectroscopy; reactive ion ... See more keywords