Anneal induced transformations of defects in hadron irradiated Si wafers and Schottky diodes
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DOI: 10.1016/j.mssp.2017.11.035
Abstract: Abstract In this research, the anneal induced transformations of radiation defects have been studied in n-type and p-type CZ and FZ Si samples, irradiated with relativistic protons (24 GeV/c) and pions (300 MeV/c) using particle fluences up… read more here.
Keywords: radiation defects; induced transformations; schottky diodes; anneal induced ... See more keywords