Improved properties of atomic layer deposited ruthenium via postdeposition annealing
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DOI: 10.1116/6.0001078
Abstract: The resistivity, morphology, and effective work function of thin film ruthenium deposited by thermal atomic layer deposition (ALD) using η4-2,3-dimethylbutadiene ruthenium tricarbonyl [Ru(DMBD)(CO)3] and O2 are investigated before and after annealing at temperatures up to… read more here.
Keywords: ruthenium; improved properties; annealing 500; atomic layer ... See more keywords